Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers
	Xu YQ
刊名	journal of nanoscience and nanotechnology
	2009
卷号	9 期号:2 页码:1333-1336
关键词	InAs Quantum Dots Metamorphic Buffer Molecular Beam Epitaxy
ISSN号	1533-4880
通讯作者	wu bp chinese acad sci inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china.
中文摘要	in this work, inas quantum dots (qds) grown on a linear graded ingaas metamorphic buffer layer by molecular beam epitaxy have been investigated. the growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (afm). inas qds were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (pl). the effects of post-growth rapid thermal annealing (rta) on the optical properties of the inas qds were investigated. after the rta, the pl peak of the qds was blue-shifted and the full width at half maximum decreased.
学科主题	半导体化学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7331]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu YQ. Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers[J]. journal of nanoscience and nanotechnology,2009,9(2):1333-1336.
APA	Xu YQ.(2009).Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers.journal of nanoscience and nanotechnology,9(2),1333-1336.
MLA	Xu YQ."Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers".journal of nanoscience and nanotechnology 9.2(2009):1333-1336.