Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell

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	Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell
	Zhang H; Yin ZG; Zhang XW
刊名	science in china series e-technological sciences
	2009
卷号	52 期号:5 页码:1176-1180
关键词	quantum efficiency temperature coefficient solar cell
ISSN号	1006-9321
通讯作者	liu l chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: lliu@semi.ac.cn
中文摘要	gainp/gaas dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (mocvd) technique. quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160a degrees c. the results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. and red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. the short-circuit current density temperature coefficients dj (sc)/dt of gainp subcell and gaas subcell are determined to be 8.9 and 7.4 mu a/cm(2)/a degrees c from the quantum efficiency data, respectively. and the open-circuit cell voltage temperature coefficients dv (oc)/dt calculated based on a theoretical equation are -2.4 mv/a degrees c and -2.1 mv/a degrees c for gainp subcell and gaas subcell.
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7221]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang H,Yin ZG,Zhang XW. Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell[J]. science in china series e-technological sciences,2009,52(5):1176-1180.
APA	Zhang H,Yin ZG,&Zhang XW.(2009).Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell.science in china series e-technological sciences,52(5),1176-1180.
MLA	Zhang H,et al."Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell".science in china series e-technological sciences 52.5(2009):1176-1180.