An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors
	Yang H; Wang H; Zhu JJ; Jiang DS; Wang H; Yang H; Zhao DG; Zhang SM
刊名	chinese physics letters
	2009
卷号	26 期号:5 页码:art. no. 058501
关键词	SINGLE-CRYSTAL GAN HETEROJUNCTION DETECTORS PHOTODIODES LAYER
ISSN号	0256-307x
通讯作者	zhao dg chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. e-mail address: dgzhao@red.semi.ac.cn
中文摘要	the gain mechanism in gan schottky barrier ultraviolet photodetectors is investigated by focused light beam. when the incident light illuminates the central region of the schottky contact electrode, the responsivity changes very little with the increase of reverse bias voltage. however, when the incident light illuminates the edge region of the electrode, the responsivity increases remarkably with the increase of reverse bias voltage, and the corresponding quantum efficiency could be even higher than 100%. it is proposed that the surface states near the edge of the electrode may lead to a reduction of effective schottky barrier height and an enhancement of electron injection, resulting in the anomalous gain.
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 60836003 60776047605060016047602160576003national basic research program of china 2007cb936700 national high technology research and development program of china 2007aa03z401 supported by the national natural science foundation of china under grant nos 60836003, 60776047, 60506001, 60476021 and 60576003, the national basic research program of china under grant no 2007cb936700, and the national high technology research and development program of china under grant no 2007aa03z401.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7217]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang H,Wang H,Zhu JJ,et al. An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors[J]. chinese physics letters,2009,26(5):art. no. 058501.
APA	Yang H.,Wang H.,Zhu JJ.,Jiang DS.,Wang H.,...&Zhang SM.(2009).An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors.chinese physics letters,26(5),art. no. 058501.
MLA	Yang H,et al."An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors".chinese physics letters 26.5(2009):art. no. 058501.