Size dependence of biexciton binding energy in single InAs/GaAs quantum dots

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	Size dependence of biexciton binding energy in single InAs/GaAs quantum dots
	Don XM ; Sun BQ ; Huang SS ; Ni HQ ; Niu ZC ; Yang FH ; Jia R
刊名	chinese physics b
	2009
卷号	18 期号:6 页码:2258-2263
关键词	biexcition binding energy single quantum dots exciton molecular model Heitler-London method
ISSN号	1674-1056
通讯作者	sun bq chinese acad sci inst semicond sklsm beijing 100083 peoples r china. e-mail address: bqsun@semi.ac.cn
中文摘要	this paper studies the size dependence of biexciton binding energy in single quantum dots (qds) by using atomic force microscopy and micro-photoluminescence measurements. it finds that the biexciton binding energies in the qds show "binding" and "antibinding" properties which correspond to the large and small sizes of qds, respectively. the experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the heitler-london method.
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundations of china o69c041001 2007cb924904 project supported by the national natural science foundations of china (grant nos o69c041001 and 2007cb924904).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7175]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Don XM,Sun BQ,Huang SS,et al. Size dependence of biexciton binding energy in single InAs/GaAs quantum dots[J]. chinese physics b,2009,18(6):2258-2263.
APA	Don XM.,Sun BQ.,Huang SS.,Ni HQ.,Niu ZC.,...&Jia R.(2009).Size dependence of biexciton binding energy in single InAs/GaAs quantum dots.chinese physics b,18(6),2258-2263.
MLA	Don XM,et al."Size dependence of biexciton binding energy in single InAs/GaAs quantum dots".chinese physics b 18.6(2009):2258-2263.