Structural and Magnetic Properties of Sm Implanted GaN

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	Structural and Magnetic Properties of Sm Implanted GaN
	Zhang ML
刊名	chinese physics letters
	2009
卷号	26 期号:7 页码:art. no. 077502
ISSN号	0256-307x
通讯作者	jiang lj chinese acad sci novel mat lab inst semicond beijing 100083 peoples r china. e-mail address: ljjiang@semi.ac.cn
中文摘要	the structural and magnetic properties of sm ion-implanted gan with different sm concentrations are investigated. xrd results do not show any peaks associated with second phase formation. magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering temperature above room temperature in all the implanted samples, while the effective magnetic moment per sm obtained from saturation magnetization gives a much higher value than the atomic moment of sm. these results could be explained by the phenomenological model proposed by dhar et al. [phys. rev. lett. 94(2005) 037205, phys. rev. b 72(2005) 245203] in terms of a long-range spin polarization of the gan matrix by the sm atoms.
学科主题	半导体物理
收录类别	SCI
资助信息	knowledge innovation project of chinese academy of sciences yyyj-0701-02 national natural science foundation of china 60576046 60606002national basic research program of china 2002cb311903 2006cb604905 513270605supported by the knowledge innovation project of chinese academy of sciences under grant no yyyj-0701-02 the national natural science foundation of china under grant nos 60576046 and 60606002 and the national basic research program of china under grant no 2002cb311903 2006cb604905 and 513270605.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7091]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang ML. Structural and Magnetic Properties of Sm Implanted GaN[J]. chinese physics letters,2009,26(7):art. no. 077502.
APA	Zhang ML.(2009).Structural and Magnetic Properties of Sm Implanted GaN.chinese physics letters,26(7),art. no. 077502.
MLA	Zhang ML."Structural and Magnetic Properties of Sm Implanted GaN".chinese physics letters 26.7(2009):art. no. 077502.