Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires
Wang M ; Chang K ; Wang LG ; Dai N ; Peeters FM
刊名nanotechnology
2009
卷号20期号:36页码:art. no. 365202
关键词CONDUCTANCE
ISSN号0957-4484
通讯作者wang m chinese acad sci inst semicond sklsm pob 912 beijing 100083 peoples r china. e-mail address: kchang@red.semi.ac.cn
中文摘要we investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the rashba spin-orbit interaction (rsoi) and the dresselhaus spin-orbit interaction (dsoi). we find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the rsoi and dsoi, since the dsoi is induced by bulk inversion asymmetry, which is determined by crystallographic plane. this interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.
学科主题半导体物理
收录类别SCI
资助信息nsfc 60525405 10874175flemish science foundation (fwo-vl) belgian science policy (iap) flemish-china sweden-china bilateral program this work is partly supported by the nsfc no. 60525405 and 10874175 the flemish science foundation (fwo-vl) the belgian science policy (iap) and the flemish-china and the sweden-china bilateral program.
语种英语
公开日期2010-03-08
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/7027]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Wang M,Chang K,Wang LG,et al. Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires[J]. nanotechnology,2009,20(36):art. no. 365202.
APA Wang M,Chang K,Wang LG,Dai N,&Peeters FM.(2009).Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires.nanotechnology,20(36),art. no. 365202.
MLA Wang M,et al."Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires".nanotechnology 20.36(2009):art. no. 365202.
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