Electroluminescence from Ge on Si substrate at room temperature

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	Electroluminescence from Ge on Si substrate at room temperature
	Su SJ; Xue CL
刊名	applied physics letters
	2009
卷号	95 期号:9 页码:art. no. 092102
关键词	SEMICONDUCTORS DEPENDENCE SILICON GAP
ISSN号	0003-6951
通讯作者	cheng bw chinese acad sci inst semicond state key lab integrated optoelect beijing 100083 peoples r china. e-mail address: cbw@semi.ac.cn
中文摘要	a ge/si heterojunction light emitting diode with a p(+)-ge/i-ge/n+-si structure was fabricated using the ultrahigh vacuum chemical vapor deposition technology on n+-si substrate. the device had a good i-v rectifying behavior. under forward bias voltage ranging from 1.1 to 2.5 v, electroluminescence around 1565 nm was observed at room temperature. the mechanism of the light emission is discussed by the radiative lifetime and the scattering rate. the results indicate that germanium is a potential candidate for silicon-based light source material. (c) 2009 american institute of physics. [doi 10.1063/1.3216577]
学科主题	光电子学
收录类别	SCI
资助信息	major state basic research program of china 2007cb613404 national high technology research and development program of china 2006aa03z415 national natural science foundation of china 60676005 this work was supported by the major state basic research program of china (grant no. 2007cb613404) national high technology research and development program of china (grant no. 2006aa03z415) and the national natural science foundation of china (grant no. 60676005).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7003]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Su SJ,Xue CL. Electroluminescence from Ge on Si substrate at room temperature[J]. applied physics letters,2009,95(9):art. no. 092102.
APA	Su SJ,&Xue CL.(2009).Electroluminescence from Ge on Si substrate at room temperature.applied physics letters,95(9),art. no. 092102.
MLA	Su SJ,et al."Electroluminescence from Ge on Si substrate at room temperature".applied physics letters 95.9(2009):art. no. 092102.