Evolution of Ge and SiGe quantum dots under excimer laser annealing

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	Evolution of Ge and SiGe quantum dots under excimer laser annealing
	Han GQ ; Zeng YG ; Yu JZ ; Cheng BW ; Yang HT
刊名	chinese physics letters
	2008
卷号	25 期号:1 页码:242-245
ISSN号	0256-307x
通讯作者	han, gq, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: hgquan@red.semi.ac.cn
中文摘要	we present different relaxation mechanisms of ge and sige quantum dots under excimer laser annealing. investigation of the coarsening and relaxation of the dots shows that the strain in ge dots on ge films is relaxed by dislocation since there is no interface between the ge dots and the ge layer, while the sige dots on si0.77ge0.23 film relax by lattice distortion to coherent clots, which results from the obvious interface between the sige clots and the si0.77ge0.23 film. the results are suggested and sustained by vanderbilt and wickham's theory, and also demonstrate that no bulk diffusion ogeurs during the excimer laser annealing.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6896]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han GQ,Zeng YG,Yu JZ,et al. Evolution of Ge and SiGe quantum dots under excimer laser annealing[J]. chinese physics letters,2008,25(1):242-245.
APA	Han GQ,Zeng YG,Yu JZ,Cheng BW,&Yang HT.(2008).Evolution of Ge and SiGe quantum dots under excimer laser annealing.chinese physics letters,25(1),242-245.
MLA	Han GQ,et al."Evolution of Ge and SiGe quantum dots under excimer laser annealing".chinese physics letters 25.1(2008):242-245.