GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers
Yu SQ ; Cao Y ; Johnson SR ; Zhang YH ; Huang YZ
刊名journal of vacuum science & technology b
2008
卷号26期号:1页码:56-61
关键词MU-M
ISSN号1071-1023
通讯作者yu, sq, arizona state univ, ctr solid state elect res, tempe, az 85287 usa. 电子邮箱地址: yushq@asu.edu
中文摘要theoretical calculations of the mode characteristics of an equilateral-triangle resonator (etr) with a 10 mu m cavity side length show that the fundamental mode, with longitudinal mode index of 25, has a wavelength of 2.185 mu m and a longitudinal mode separation of 100 nm. this mode has a quality factor (similar to 2x10(5)) that is much larger than the first (similar to 5x10(4)) and second (similar to 3x10(4)) order modes, indicating that single fundamental mode lasing should be accessible over a broad wavelength tuning range. an electrically injected etr based on this design is fabricated from an ingaassb/algaassb/gasb, graded-index separate-confinement heterostructure, laser diode wafer with a 2.1 mu m emission wavelength. this device achieved single mode, continuous wave operation at 77 k with a threshold current of 0.5 ma and a single mode wavelength tuning range of 3.25 nm, which is accomplished by varying the injection current from 0.5 to 6.0 ma. (c) 2008 american vacuum society.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-03-08
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/6834]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Yu SQ,Cao Y,Johnson SR,et al. GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers[J]. journal of vacuum science & technology b,2008,26(1):56-61.
APA Yu SQ,Cao Y,Johnson SR,Zhang YH,&Huang YZ.(2008).GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers.journal of vacuum science & technology b,26(1),56-61.
MLA Yu SQ,et al."GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers".journal of vacuum science & technology b 26.1(2008):56-61.
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