Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions

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	Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions
	Du, GX ; Han, XF ; Deng, JJ ; Wang, WZ ; Zhao, JH
刊名	journal of applied physics
	2008
卷号	103 期号:7 页码:art. no. 07d105
关键词	HETEROSTRUCTURES SEMICONDUCTORS (GA MN)AS
ISSN号	0021-8979
通讯作者	han, xf, chinese acad sci, inst phys, beijing natl lab condensed matter phys, state key lab magnetism, beijing 100080, peoples r china. 电子邮箱地址: xfhan@aphy.iphy.ac.cn ; jhzhao@red.semi.ac.cn
中文摘要	we reported the all electronic demonstration of spin injection and detection in the trilayers with hybrid structure of cofeb/gaas/(ga,mn)as (metal/insulator semiconductor) by probing the magnetoresistance at low temperature from 1.8 to 30 k. tunneling magnetoresistance (tmr) ratios of 3.8%, 4.7%, 2.9%, and 1.4% at 1.8, 10, 20, and 30 k, respectively, were observed. bias dependence of both the junction resistance and tmr ratio was studied systematically. v-half at which tmr drops to half of its maximum is 6.3 mv, being much smaller compared to that observed in (ga,mn)as/znse/fe and (ga,mn)as/alas/mnas hybrid structures, indicating lower fermi energy of (ga,mn)as.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6718]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Du, GX,Han, XF,Deng, JJ,et al. Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions[J]. journal of applied physics,2008,103(7):art. no. 07d105.
APA	Du, GX,Han, XF,Deng, JJ,Wang, WZ,&Zhao, JH.(2008).Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions.journal of applied physics,103(7),art. no. 07d105.
MLA	Du, GX,et al."Tunneling magnetoresistance in CoFeB/GaAs/(Ga,Mn)As hybrid magnetic tunnel junctions".journal of applied physics 103.7(2008):art. no. 07d105.