Fabrication of nanoscale metallic air-bridges by introducing a SiO2 sacrificial layer

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	Fabrication of nanoscale metallic air-bridges by introducing a SiO2 sacrificial layer
	Zhang, Y ; Liu, J ; Li, Y ; Yang, FH
刊名	materials science in semiconductor processing
	2007
卷号	10 期号:39908 页码:194-199
关键词	nanoscale metallic air-bridge sacrificial layer electron-beam lithography
ISSN号	1369-8001
通讯作者	zhang, y, chinese acad sci, inst semicond, qinghua e rd jia 35,haidian dist, beijing 100083, peoples r china. 电子邮箱地址: zhangyang@semi.ac.cn ; liujian@semi.ac.cn ; liyan@semi.ac.cn ; fhyang@semi.ac.cn
中文摘要	a new method to fabricate nanoscale metallic air-bridges has been investigated. the pillar patterns of the air-bridge were defined on a sio2, sacrificial layer by electron-beam lithography combined with inductively coupled plasma etching. thereafter, the span (suspended part between the pillars) patterns were defined with a second electron-beam exposure on a pmma/pmma-maa resist system. the fabrication process was completed by subsequent metal electron-beam evaporation, lift-off in acetone, and removal of the sacrificial layer in a buffered hydrofluoric (hf) solution. air-bridges with two different geometries (line-shaped and cross-shaped) were studied in detail. the narrowest width of the air-bridges was around 200 nm, and the typical length of the air-bridges was 2-5 mu m. the advantages of our method are the simplicity of carrying out electron-beam exposure with good reproducibility and the capability of more accurate control of the pillar sizes and shapes of the air-bridge. (c) 2007 elsevier ltd. all rights reserved.
学科主题	微电子学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6714]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang, Y,Liu, J,Li, Y,et al. Fabrication of nanoscale metallic air-bridges by introducing a SiO2 sacrificial layer[J]. materials science in semiconductor processing,2007,10(39908):194-199.
APA	Zhang, Y,Liu, J,Li, Y,&Yang, FH.(2007).Fabrication of nanoscale metallic air-bridges by introducing a SiO2 sacrificial layer.materials science in semiconductor processing,10(39908),194-199.
MLA	Zhang, Y,et al."Fabrication of nanoscale metallic air-bridges by introducing a SiO2 sacrificial layer".materials science in semiconductor processing 10.39908(2007):194-199.