Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes

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	Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes
	Wu, D ; Wang, H ; Wu, B ; Ni, H ; Huang, S ; Xiong, Y ; Wang, P ; Han, Q ; Niu, Z ; Tangring, I ; Wang, SM
刊名	electronics letters
	2008
卷号	44 期号:7 页码:474-u6
关键词	CONTINUOUS-WAVE OPERATION 1.3-MU-M
ISSN号	0013-5194
通讯作者	wu, d, chinese acad sci, inst semicond, state key lab superlattice & microstruct, beijing 100083, peoples r china.
中文摘要	very low threshold current density ingaas/ gaas quantum well laser diodes grown by molecular beam epitaxy on ingaas metamorphic buffers are reported. the lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mm is centred at 1337.2 nm; the threshold current density is 205 a/cm(2) at room temperature under continuous-wave operation.
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6710]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wu, D,Wang, H,Wu, B,et al. Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes[J]. electronics letters,2008,44(7):474-u6.
APA	Wu, D.,Wang, H.,Wu, B.,Ni, H.,Huang, S.,...&Wang, SM.(2008).Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes.electronics letters,44(7),474-u6.
MLA	Wu, D,et al."Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes".electronics letters 44.7(2008):474-u6.