Long-wavelength light emission from self-assembled heterojunction quantum dots

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Long-wavelength light emission from self-assembled heterojunction quantum dots
	Zhou, ZQ ; Xu, YQ ; Hao, RT ; Tang, B ; Ren, ZW ; Niu, ZC
刊名	journal of applied physics
	2008
卷号	103 期号:9 页码:art. no. 094315
关键词	MU-M GAAS GROWTH EPITAXY
ISSN号	0021-8979
通讯作者	xu, yq, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: yingqxu@semi.ac.cn
中文摘要	the authors report the optical characteristics of gasb/inas/gaas self-assembled heterojunction quantum dots (qds). with increasing gasb deposition, the room temperature emission wavelength can be extended to 1.56 mu m. the photoluminescence mechanism is considered to be a type-ii transition with electrons confined in inas and holes in gasb.(c) 2008 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6672]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhou, ZQ,Xu, YQ,Hao, RT,et al. Long-wavelength light emission from self-assembled heterojunction quantum dots[J]. journal of applied physics,2008,103(9):art. no. 094315.
APA	Zhou, ZQ,Xu, YQ,Hao, RT,Tang, B,Ren, ZW,&Niu, ZC.(2008).Long-wavelength light emission from self-assembled heterojunction quantum dots.journal of applied physics,103(9),art. no. 094315.
MLA	Zhou, ZQ,et al."Long-wavelength light emission from self-assembled heterojunction quantum dots".journal of applied physics 103.9(2008):art. no. 094315.