Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers

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	Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers
	Islam MR ; Chen NF ; Yamada M
刊名	crystal research and technology
	2008
卷号	43 期号:10 页码:1091-1096
关键词	Raman scattering
ISSN号	0232-1300
通讯作者	islam, mr, khulna univ engn & technol, dept elect & elect engn, khulna 9203, bangladesh. 电子邮箱地址: mri@eee.kuet.ac.bd
中文摘要	raman scattering (rs) experiments have been performed for simultaneous determination of mn composition and strain in ga1-xmnxsb thin films grown on gasb substrate by liquid phase epitaxy technique. the raman spectra obtained from various ga1-xmnxsb samples show only gasb-like phonon modes whose frequency positions are found to have mn compositional dependence. with the combination of epilayer strain model, rs and energy dispersive x-ray (edx) experiments, the compositional dependence of gasb-like lo phonon frequency is proposed both in strained and unstrained conditions. the proposed relationships are used to evaluate mn composition and strain from the ga1-xmnxsb samples. the results obtained from the rs data are found to be in good agreement with those determined independently by the edx analysis. furthermore, the frequency positions of mnsb-like phonon modes are suggested by reduced-mass model. (c) 2008 wiley-vch verlag gmbh & co. kgaa, weinheim
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6416]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Islam MR,Chen NF,Yamada M. Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers[J]. crystal research and technology,2008,43(10):1091-1096.
APA	Islam MR,Chen NF,&Yamada M.(2008).Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers.crystal research and technology,43(10),1091-1096.
MLA	Islam MR,et al."Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers".crystal research and technology 43.10(2008):1091-1096.