W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention

	W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention
	Peng, C ; Wu, LC ; Rao, F ; Song, ZT ; Yang, PX ; Song, HJ ; Ren, K ; Zhou, XL ; Zhu, M ; Liu, B ; Chu, JH
刊名	APPLIED PHYSICS LETTERS
	2012
卷号	101 期号:12 页码:122108
ISSN号	0003-6951
通讯作者	Peng, C (reprint author), E China Normal Univ, Dept Elect, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.
中文摘要	W-Sb-Te phase-change material has been proposed to improve the performance of phase-change memory (PCM). Crystallization temperature, crystalline resistance, and 10-year data retention of Sb2Te increase markedly by W doping. The W-x(Sb2Te)(1-x) films crys
学科主题	Physics
收录类别	2012SCI-049
原文出处	10.1063/1.4754138
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114861]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Peng, C,Wu, LC,Rao, F,et al. W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention[J]. APPLIED PHYSICS LETTERS,2012,101(12):122108.
APA	Peng, C.,Wu, LC.,Rao, F.,Song, ZT.,Yang, PX.,...&Chu, JH.(2012).W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention.APPLIED PHYSICS LETTERS,101(12),122108.
MLA	Peng, C,et al."W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention".APPLIED PHYSICS LETTERS 101.12(2012):122108.