Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer

	Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer
	Zhang, JY ; Wang, XF ; Wang, XD ; Ma, HL ; Fu, YC ; Ji, A ; Song, ZT ; Feng, SL ; Yang, FH
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2012
卷号	51 期号:2 页码:24302
ISSN号	0021-4922
通讯作者	Zhang, JY (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.
中文摘要	A phase-change random access memory (PCRAM) geometric model is proposed to improve the thermal efficiency. A low-kappa layer with very low thermal conductivity is inserted into the insulation layer. Then, the effective programming area and the programming
学科主题	Physics
收录类别	2012SCI-202
原文出处	10.1143/JJAP.51.024302
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114860]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, JY,Wang, XF,Wang, XD,et al. Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2012,51(2):24302.
APA	Zhang, JY.,Wang, XF.,Wang, XD.,Ma, HL.,Fu, YC.,...&Yang, FH.(2012).Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer.JAPANESE JOURNAL OF APPLIED PHYSICS,51(2),24302.
MLA	Zhang, JY,et al."Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer".JAPANESE JOURNAL OF APPLIED PHYSICS 51.2(2012):24302.