Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed

	Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed
	Zhu, M ; Wu, LC ; Song, ZT ; Rao, F ; Cai, DL ; Peng, C ; Zhou, XL ; Ren, K ; Song, SN ; Liu, B ; Feng, SL
刊名	APPLIED PHYSICS LETTERS
	2012
卷号	100 期号:12 页码:122101
关键词	antimony alloys crystallisation metallic thin films phase change materials phase change memories tellurium alloys titanium alloys
ISSN号	0003-6951
通讯作者	Wu, LC (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China.
中文摘要	With a high crystallization temperature of 211 degrees C, Ti10Sb60Te30 phase change material exhibits a data retention of 10-yr at 137 degrees C, which is much better than that of usual Ge2Sb2Te5. No other phase is formed in Ti10Sb60Te30 film except hexag
学科主题	Physics
收录类别	2012SCI-159
原文出处	10.1063/1.3695036
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114855]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhu, M,Wu, LC,Song, ZT,et al. Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed[J]. APPLIED PHYSICS LETTERS,2012,100(12):122101.
APA	Zhu, M.,Wu, LC.,Song, ZT.,Rao, F.,Cai, DL.,...&Feng, SL.(2012).Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed.APPLIED PHYSICS LETTERS,100(12),122101.
MLA	Zhu, M,et al."Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed".APPLIED PHYSICS LETTERS 100.12(2012):122101.