Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser

	Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
	Li, SG ; Gong, Q ; Cao, CF ; Wang, XZ ; Chen, P ; Yue, L ; Liu, QB ; Wang, HL ; Ma, CH
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2012
卷号	15 期号:1 页码:86-90
关键词	Semiconductor laser Quantum dot laser Indium phosphide Gas source molecular beam epitaxy
ISSN号	1369-8001
通讯作者	Li, SG (reprint author), Shenzhen Inst Informat Technol, Dept Elect Commun & Technol, 1068 W Nigang Rd, Shenzhen 518029, Peoples R China.
中文摘要	We report on the lasing characteristics of InAs/InP(100) quantum dots laser through changing the temperature under continuous-wave mode. Three lasing peaks are simultaneously observed at temperature of 80 K and the lasing order of each peak is unrelated w
学科主题	Engineering; Materials Science; Physics
收录类别	2012SCI-192
原文出处	10.1016/j.mssp.2011.10.001
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114842]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Li, SG,Gong, Q,Cao, CF,et al. Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2012,15(1):86-90.
APA	Li, SG.,Gong, Q.,Cao, CF.,Wang, XZ.,Chen, P.,...&Ma, CH.(2012).Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,15(1),86-90.
MLA	Li, SG,et al."Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 15.1(2012):86-90.