Mechanism of Ge2Sb2Te5 chemical mechanical polishing

	Mechanism of Ge2Sb2Te5 chemical mechanical polishing
	Wang, LY ; Song, ZT ; Zhong, M ; Liu, WL ; Yan, WX ; Qin, F ; He, AD ; Liu, B
刊名	APPLIED SURFACE SCIENCE
	2012
卷号	258 期号:12 页码:5185-5190
关键词	CMP GST Mechanism
ISSN号	0169-4332
通讯作者	Wang, LY (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China.
中文摘要	We report the exploration of Ge2Sb2Te5 (GST) chemical mechanical polishing (CMP) mechanism. Static etching experiments of GST film were first conducted in two typical silica-based slurries (pH 2 and pH 11). To investigate the chemical nature of GST in dif
学科主题	Chemistry; Materials Science; Physics
收录类别	2012SCI-156
原文出处	10.1016/j.apsusc.2012.02.001
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114800]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang, LY,Song, ZT,Zhong, M,et al. Mechanism of Ge2Sb2Te5 chemical mechanical polishing[J]. APPLIED SURFACE SCIENCE,2012,258(12):5185-5190.
APA	Wang, LY.,Song, ZT.,Zhong, M.,Liu, WL.,Yan, WX.,...&Liu, B.(2012).Mechanism of Ge2Sb2Te5 chemical mechanical polishing.APPLIED SURFACE SCIENCE,258(12),5185-5190.
MLA	Wang, LY,et al."Mechanism of Ge2Sb2Te5 chemical mechanical polishing".APPLIED SURFACE SCIENCE 258.12(2012):5185-5190.