Germanium Nitride as a Buffer Layer for Phase Change Memory

	Germanium Nitride as a Buffer Layer for Phase Change Memory
	Zhang, X ; Liu, B ; Peng, C ; Rao, F ; Zhou, XL ; Song, SN ; Wang, LY ; Cheng, Y ; Wu, LC ; Yao, DN ; Song, ZT ; Feng, SL
刊名	CHINESE PHYSICS LETTERS
	2012
卷号	29 期号:10 页码:107201
ISSN号	0256-307X
通讯作者	Liu, B (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China.
中文摘要	The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented. It is found that the adhesive strength between the Ge2Sb2Te5(GST) layer and the layer below could be increased at least 20 times, which i
学科主题	Physics
收录类别	2012SCI-034
原文出处	10.1088/0256-307X/29/10/107201
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114775]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, X,Liu, B,Peng, C,et al. Germanium Nitride as a Buffer Layer for Phase Change Memory[J]. CHINESE PHYSICS LETTERS,2012,29(10):107201.
APA	Zhang, X.,Liu, B.,Peng, C.,Rao, F.,Zhou, XL.,...&Feng, SL.(2012).Germanium Nitride as a Buffer Layer for Phase Change Memory.CHINESE PHYSICS LETTERS,29(10),107201.
MLA	Zhang, X,et al."Germanium Nitride as a Buffer Layer for Phase Change Memory".CHINESE PHYSICS LETTERS 29.10(2012):107201.