Disorder dependence of helical edge states in HgTe/CdTe quantum wells

	Disorder dependence of helical edge states in HgTe/CdTe quantum wells
	Chen, L ; Liu, Q ; Lin, XL ; Zhang, XG ; Jiang, XY
刊名	NEW JOURNAL OF PHYSICS
	2012
卷号	14 页码:43028
ISSN号	1367-2630
通讯作者	Liu, Q (reprint author), CAS, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
中文摘要	In recent years, extensive attention has been focused on a new topological phase induced by nonmagnetic disorder, known as the topological Anderson insulator (TAI). In this work, we study the disorder strength dependence of the edge states in TAI phase in
学科主题	Physics
收录类别	2012SCI-137
原文出处	10.1088/1367-2630/14/4/043028
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114760]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Chen, L,Liu, Q,Lin, XL,et al. Disorder dependence of helical edge states in HgTe/CdTe quantum wells[J]. NEW JOURNAL OF PHYSICS,2012,14:43028.
APA	Chen, L,Liu, Q,Lin, XL,Zhang, XG,&Jiang, XY.(2012).Disorder dependence of helical edge states in HgTe/CdTe quantum wells.NEW JOURNAL OF PHYSICS,14,43028.
MLA	Chen, L,et al."Disorder dependence of helical edge states in HgTe/CdTe quantum wells".NEW JOURNAL OF PHYSICS 14(2012):43028.