An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector

	An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector
	Zhang, C ; Song, ZT ; Wu, GP ; Liu, B ; Wang, LH ; Xu, J ; Liu, Y ; Wang, L ; Yang, ZY ; Feng, SL
刊名	CHINESE PHYSICS LETTERS
	2012
卷号	29 期号:3 页码:38104
ISSN号	0256-307X
通讯作者	Zhang, C (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
中文摘要	An integrated phase change memory cell with dual trench epitaxial diode is successfully integrated in the traditional 0.13 mu m CMOS technology. By using dual trench isolated structure in the memory cell, it is feasible to employ a Si-diode as a selector
学科主题	Physics
收录类别	2012SCI-170
原文出处	10.1088/0256-307X/29/3/038104
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114742]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, C,Song, ZT,Wu, GP,et al. An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector[J]. CHINESE PHYSICS LETTERS,2012,29(3):38104.
APA	Zhang, C.,Song, ZT.,Wu, GP.,Liu, B.,Wang, LH.,...&Feng, SL.(2012).An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector.CHINESE PHYSICS LETTERS,29(3),38104.
MLA	Zhang, C,et al."An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector".CHINESE PHYSICS LETTERS 29.3(2012):38104.