Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

	Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
	Le, L.C ; Zhao, D.G ; Jiang, D.S ; Zhang, S.M ; Yang, H ; Li, L ; Wu, L.L ; Chen, P ; Liu, Z.S ; Li, Z.C ; Fan, Y.M ; Zhu, J.J ; Wang, H
刊名	applied physics letters
	2012
卷号	101 期号:25 页码:252110
学科主题	光电子学
收录类别	EI
语种	英语
公开日期	2013-04-19
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23899]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Le, L.C,Zhao, D.G,Jiang, D.S,et al. Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes[J]. applied physics letters,2012,101(25):252110.
APA	Le, L.C.,Zhao, D.G.,Jiang, D.S.,Zhang, S.M.,Yang, H.,...&Wang, H.(2012).Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes.applied physics letters,101(25),252110.
MLA	Le, L.C,et al."Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes".applied physics letters 101.25(2012):252110.