Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots

	Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots
	Wang, Lijuan ; He, Jifang ; Shang, Xiangjun ; Li, Mifeng ; Yu, Ying ; Zha, Guowei ; Ni, Haiqiao ; Niu, Zhichuan
刊名	semiconductor science and technology
	2012
卷号	27 期号:11 页码:115010
学科主题	半导体物理
收录类别	EI
语种	英语
公开日期	2013-04-19
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23897]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Wang, Lijuan,He, Jifang,Shang, Xiangjun,et al. Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots[J]. semiconductor science and technology,2012,27(11):115010.
APA	Wang, Lijuan.,He, Jifang.,Shang, Xiangjun.,Li, Mifeng.,Yu, Ying.,...&Niu, Zhichuan.(2012).Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots.semiconductor science and technology,27(11),115010.
MLA	Wang, Lijuan,et al."Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots".semiconductor science and technology 27.11(2012):115010.