Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes

	Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes
	Yiyun, Zhang ; Enqing, Guo ; Zhi, Li ; Tongbo, Wei ; Jing, Li ; Xiaoyan, Yi ; Guohong, Wang
刊名	ieee photonics technology letters
	2012
卷号	24 期号:2 页码:243-245
学科主题	半导体器件
收录类别	EI
语种	英语
公开日期	2013-04-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23931]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Yiyun, Zhang,Enqing, Guo,Zhi, Li,et al. Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes[J]. ieee photonics technology letters,2012,24(2):243-245.
APA	Yiyun, Zhang.,Enqing, Guo.,Zhi, Li.,Tongbo, Wei.,Jing, Li.,...&Guohong, Wang.(2012).Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes.ieee photonics technology letters,24(2),243-245.
MLA	Yiyun, Zhang,et al."Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes".ieee photonics technology letters 24.2(2012):243-245.