Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon

	Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon
	Zhang, S.G ; Zhang, X.W ; Yin, Z.G ; Wang, J.X ; Si, F.T ; Gao, H.L ; Dong, J.J ; Liu, X
刊名	journal of applied physics
	2012
卷号	112 期号:1 页码:013112
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2013-04-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23922]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhang, S.G,Zhang, X.W,Yin, Z.G,et al. Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon[J]. journal of applied physics,2012,112(1):013112.
APA	Zhang, S.G.,Zhang, X.W.,Yin, Z.G.,Wang, J.X.,Si, F.T.,...&Liu, X.(2012).Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon.journal of applied physics,112(1),013112.
MLA	Zhang, S.G,et al."Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon".journal of applied physics 112.1(2012):013112.