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	Al0.3Ga0.7As microtips grown by self-assembled LPE for integrated SNOM sensors
	Hu, LZ; Jie, S; Meng, QD; Su, YM; Yu, Z
刊名	JOURNAL OF CRYSTAL GROWTH
	2002
卷号	240页码:98-103
关键词	nanostructures liquid phase epitaxy selective epitaxy semiconducting III-V materials
ISSN号	0022-0248
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6217725
专题	大连理工大学
作者单位	Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion, Dalian 116023, Liaoning Prov, Peoples R China.
推荐引用方式 GB/T 7714	Hu, LZ,Jie, S,Meng, QD,et al. Al0.3Ga0.7As microtips grown by self-assembled LPE for integrated SNOM sensors[J]. JOURNAL OF CRYSTAL GROWTH,2002,240:98-103.
APA	Hu, LZ,Jie, S,Meng, QD,Su, YM,&Yu, Z.(2002).Al0.3Ga0.7As microtips grown by self-assembled LPE for integrated SNOM sensors.JOURNAL OF CRYSTAL GROWTH,240,98-103.
MLA	Hu, LZ,et al."Al0.3Ga0.7As microtips grown by self-assembled LPE for integrated SNOM sensors".JOURNAL OF CRYSTAL GROWTH 240(2002):98-103.

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