QQ客服 官方微博 反馈留言

	Fabrication and photoluminescence of GaN nanowires prepared by ammoniating GaeO3/BN films on Si substrate
	XUE Chengshan WU Yuxin ZHUANG Huizhao TIAN Deheng LIU Yi'an HE Jianting AI Yujie SUN Lili WANG Fuxue[1]
	2006
卷号	51期号:14页码:1662-1665
关键词	磁控溅射 GaN纳米线 光致发光 GaeO3/BN薄膜 Si
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6099358
专题	山东师范大学
作者单位	[1]Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
推荐引用方式 GB/T 7714	XUE Chengshan WU Yuxin ZHUANG Huizhao TIAN Deheng LIU Yi'an HE Jianting AI Yujie SUN Lili WANG Fuxue[1]. Fabrication and photoluminescence of GaN nanowires prepared by ammoniating GaeO3/BN films on Si substrate[J],2006,51(14):1662-1665.
APA	XUE Chengshan WU Yuxin ZHUANG Huizhao TIAN Deheng LIU Yi'an HE Jianting AI Yujie SUN Lili WANG Fuxue[1].(2006).Fabrication and photoluminescence of GaN nanowires prepared by ammoniating GaeO3/BN films on Si substrate.,51(14),1662-1665.
MLA	XUE Chengshan WU Yuxin ZHUANG Huizhao TIAN Deheng LIU Yi'an HE Jianting AI Yujie SUN Lili WANG Fuxue[1]."Fabrication and photoluminescence of GaN nanowires prepared by ammoniating GaeO3/BN films on Si substrate".51.14(2006):1662-1665.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。