| An insulated gate bipolar transistor with surface n-Type barrier | |
| Mengxuan, Jiang; John Shen, Z.; Jun, Wang; Zhikang, Shuai; Xin, Yin; Bingbing, Sun; Linyuan, Liao | |
| 刊名 | Journal of Semiconductors
 |
| 2015 | |
| 卷号 | Vol.36 No.12 |
| ISSN号 | 1674-4926 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6093432 |
| 专题 | 湖南大学 |
| 作者单位 | 1.College of Electrical and Information Engineering, Hunan University, Changsha, China 2.State Grid Bengbu Power Supply Company, Bengbu, China |
| 推荐引用方式 GB/T 7714 | Mengxuan, Jiang,John Shen, Z.,Jun, Wang,et al. An insulated gate bipolar transistor with surface n-Type barrier[J]. Journal of Semiconductors,2015,Vol.36 No.12. |
| APA | Mengxuan, Jiang.,John Shen, Z..,Jun, Wang.,Zhikang, Shuai.,Xin, Yin.,...&Linyuan, Liao.(2015).An insulated gate bipolar transistor with surface n-Type barrier.Journal of Semiconductors,Vol.36 No.12. |
| MLA | Mengxuan, Jiang,et al."An insulated gate bipolar transistor with surface n-Type barrier".Journal of Semiconductors Vol.36 No.12(2015). |
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