Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation

	Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation
	Mao X (Mao Xue) ; Han PD (Han Pei-De) ; Hu SX (Hu Shao-Xu) ; Gao LP (Gao Li-Peng) ; Li XY (Li Xin-Yi) ; Mi YH (Mi Yan-Hong) ; Liang P (Liang Peng)
刊名	chinese physics letters
	2012
卷号	29 期号:9 页码:097101
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23837]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Mao X ,Han PD ,Hu SX ,et al. Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation[J]. chinese physics letters,2012,29(9):097101.
APA	Mao X .,Han PD .,Hu SX .,Gao LP .,Li XY .,...&Liang P .(2012).Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation.chinese physics letters,29(9),097101.
MLA	Mao X ,et al."Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation".chinese physics letters 29.9(2012):097101.