Defect of Te-doped GaSb layers grown by molecular beam epitaxy

	Defect of Te-doped GaSb layers grown by molecular beam epitaxy
	Chen Y (Chen Yan) ; Deng AH (Deng Ai-Hong) ; Tang B (Tang Bao) ; Wang GW (Wang Guo-Wei) ; Xu YQ (Xu Ying-Qiang) ; Niu ZC (Niu Zhi-Chuan)
刊名	journal of infrared and millimeter waves
	2012
卷号	31 期号:4 页码:298-301
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2013-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23857]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Chen Y ,Deng AH ,Tang B ,et al. Defect of Te-doped GaSb layers grown by molecular beam epitaxy[J]. journal of infrared and millimeter waves,2012,31(4):298-301.
APA	Chen Y ,Deng AH ,Tang B ,Wang GW ,Xu YQ ,&Niu ZC .(2012).Defect of Te-doped GaSb layers grown by molecular beam epitaxy.journal of infrared and millimeter waves,31(4),298-301.
MLA	Chen Y ,et al."Defect of Te-doped GaSb layers grown by molecular beam epitaxy".journal of infrared and millimeter waves 31.4(2012):298-301.