| Phase-Field Simulation for the Effects of Initial Vacancy Concentration and Annealing Temperature on Oxygen Clusters in Silicon Wafer | |
| Xiao-Jun GUAN; Xiang JI | |
| 2016 | |
| 关键词 | phase field simulation silicon wafer low temperature annealing initial vacancy concentration annealing temperature oxygen clusters |
| 会议录 | Proceedings of 2016 4th International Conference on Machinery,Materials and Computing Technology(ICMMCT 2016)
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| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6032488 |
| 专题 | 山东大学 |
| 作者单位 | 1.School of Materials Science and Engineering, Shandong University 2.State Key laboratory of Crystal Material, Shandong Universit |
| 推荐引用方式 GB/T 7714 | Xiao-Jun GUAN,Xiang JI. Phase-Field Simulation for the Effects of Initial Vacancy Concentration and Annealing Temperature on Oxygen Clusters in Silicon Wafer[C]. 见:. |
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