| A study on W vacancy defect in mono-layer transition-metal dichalcogenide (TMD) TFETs through systematic ab initio calculations | |
| Wu, Jixuan; Fan, Zhiqiang; Chen, Jiezhi; Jiang, Xiangwei | |
| 2017 | |
| 会议名称 | 22nd Silicon Nanoelectronics Workshop, SNW 2017 |
| 会议日期 | 4 June 2017 through 5 June 2017 |
| 卷号 | 2017-January |
| DOI | 10.23919/SNW.2017.8242271 |
| 页码 | 9-10 |
| 收录类别 | EI ; SCOPUS |
| 会议录 | 2017 Silicon Nanoelectronics Workshop, SNW 2017
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| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6029492 |
| 专题 | 山东大学 |
| 作者单位 | 1.School ofinformation Science and Engineering, Shandong University, Jinan, China 2.[Wu, Jixuan 3.Fan, Zhiqiang 4.Jiang, Xiangwe |
| 推荐引用方式 GB/T 7714 | Wu, Jixuan,Fan, Zhiqiang,Chen, Jiezhi,et al. A study on W vacancy defect in mono-layer transition-metal dichalcogenide (TMD) TFETs through systematic ab initio calculations[C]. 见:22nd Silicon Nanoelectronics Workshop, SNW 2017. 4 June 2017 through 5 June 2017. |
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