| Positive Bias Temperature Instabilities in Vertical Gate-all-around poly-Si Nanowire Field-effect Transistors | |
| Yang, Wenjing; Li, Yuan; Wang, Bo; Qian, He; Chen, Jiezhi | |
| 2018 | |
| 会议名称 | IEEE International Conference on Integrated Circuits, Technologies and Applications (IEEE ICTA) |
| 会议日期 | NOV 21-23, 2018 |
| 关键词 | GAA poly-Si Nanowire FETs PBTI trap charging |
| 页码 | 175-176 |
| 收录类别 | CPCI-S |
| 会议录 | PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, TECHNOLOGIES AND APPLICATIONS (ICTA 2018)
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| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6025211 |
| 专题 | 山东大学 |
| 作者单位 | 1.Shandong Univ, Sch Informat Sci & Engn, Qingdao 266237, Shandong, Peoples R China. 2.Tsi |
| 推荐引用方式 GB/T 7714 | Yang, Wenjing,Li, Yuan,Wang, Bo,et al. Positive Bias Temperature Instabilities in Vertical Gate-all-around poly-Si Nanowire Field-effect Transistors[C]. 见:IEEE International Conference on Integrated Circuits, Technologies and Applications (IEEE ICTA). NOV 21-23, 2018. |
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