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pi conjugation in the epitaxial Si(111)-(root 3x root 3) surface: Unconventional "bamboo hat" bonding geometry for Si
Jiang, Wei; Liu, Zheng; Zhou, Miao; Ni, Xiaojuan; Liu, Feng
刊名PHYSICAL REVIEW B
2017
卷号95
ISSN号2469-9950
DOI10.1103/PhysRevB.95.241405
URL标识查看原文
收录类别SCIE
WOS记录号WOS:000403072400002
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5939417
专题北京航空航天大学
推荐引用方式
GB/T 7714
Jiang, Wei,Liu, Zheng,Zhou, Miao,et al. pi conjugation in the epitaxial Si(111)-(root 3x root 3) surface: Unconventional "bamboo hat" bonding geometry for Si[J]. PHYSICAL REVIEW B,2017,95.
APA Jiang, Wei,Liu, Zheng,Zhou, Miao,Ni, Xiaojuan,&Liu, Feng.(2017).pi conjugation in the epitaxial Si(111)-(root 3x root 3) surface: Unconventional "bamboo hat" bonding geometry for Si.PHYSICAL REVIEW B,95.
MLA Jiang, Wei,et al."pi conjugation in the epitaxial Si(111)-(root 3x root 3) surface: Unconventional "bamboo hat" bonding geometry for Si".PHYSICAL REVIEW B 95(2017).
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