pi conjugation in the epitaxial Si(111)-(root 3x root 3) surface: Unconventional "bamboo hat" bonding geometry for Si | |
Jiang, Wei; Liu, Zheng; Zhou, Miao; Ni, Xiaojuan; Liu, Feng | |
刊名 | PHYSICAL REVIEW B |
2017 | |
卷号 | 95 |
ISSN号 | 2469-9950 |
DOI | 10.1103/PhysRevB.95.241405 |
URL标识 | 查看原文 |
收录类别 | SCIE |
WOS记录号 | WOS:000403072400002 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5939417 |
专题 | 北京航空航天大学 |
推荐引用方式 GB/T 7714 | Jiang, Wei,Liu, Zheng,Zhou, Miao,et al. pi conjugation in the epitaxial Si(111)-(root 3x root 3) surface: Unconventional "bamboo hat" bonding geometry for Si[J]. PHYSICAL REVIEW B,2017,95. |
APA | Jiang, Wei,Liu, Zheng,Zhou, Miao,Ni, Xiaojuan,&Liu, Feng.(2017).pi conjugation in the epitaxial Si(111)-(root 3x root 3) surface: Unconventional "bamboo hat" bonding geometry for Si.PHYSICAL REVIEW B,95. |
MLA | Jiang, Wei,et al."pi conjugation in the epitaxial Si(111)-(root 3x root 3) surface: Unconventional "bamboo hat" bonding geometry for Si".PHYSICAL REVIEW B 95(2017). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论