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	Exploring Hybrid STT-MTJ/CMOS Energy Solution in Near-/Sub-Threshold Regime for IoT Applications
	Cai, Hao; Wang, You; Naviner, Lirida Alves de Barros; Yang, Jun; Zhao, Weisheng
刊名	IEEE TRANSACTIONS ON MAGNETICS
	2018
卷号	54
关键词	Flip-flop (FF) forward back bias (FBB) fully depleted silicon on insulator (FD-SOI) magnetic tunnel junction (MTJ)/CMOS integration near-/sub-threshold ultralow power
ISSN号	0018-9464
DOI	10.1109/TMAG.2017.2766220
URL标识	查看原文
收录类别	SCIE ; EI
WOS记录号	WOS:000423189200006
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5935550
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Cai, Hao,Wang, You,Naviner, Lirida Alves de Barros,et al. Exploring Hybrid STT-MTJ/CMOS Energy Solution in Near-/Sub-Threshold Regime for IoT Applications[J]. IEEE TRANSACTIONS ON MAGNETICS,2018,54.
APA	Cai, Hao,Wang, You,Naviner, Lirida Alves de Barros,Yang, Jun,&Zhao, Weisheng.(2018).Exploring Hybrid STT-MTJ/CMOS Energy Solution in Near-/Sub-Threshold Regime for IoT Applications.IEEE TRANSACTIONS ON MAGNETICS,54.
MLA	Cai, Hao,et al."Exploring Hybrid STT-MTJ/CMOS Energy Solution in Near-/Sub-Threshold Regime for IoT Applications".IEEE TRANSACTIONS ON MAGNETICS 54(2018).

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