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	Enhanced Stability of Black Phosphorus Field-Effect Transistors via Hydrogen Treatment
	Wan, Bensong; Zhou, Qionghua; Zhang, Junying; Wang, Yue; Yang, Bingchao; Lv, Weiming; Zhang, Baoshun; Zeng, Zhongming; Chen, Qian; Wang, Jinlan
刊名	ADVANCED ELECTRONIC MATERIALS
	2018
卷号	4
关键词	black phosphorus carrier mobility environmental instability field-effect transistor hydrogen treatment
ISSN号	2199-160X
DOI	10.1002/aelm.201700455
URL标识	查看原文
收录类别	SCIE
WOS记录号	WOS:000424888600012
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5935383
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Wan, Bensong,Zhou, Qionghua,Zhang, Junying,et al. Enhanced Stability of Black Phosphorus Field-Effect Transistors via Hydrogen Treatment[J]. ADVANCED ELECTRONIC MATERIALS,2018,4.
APA	Wan, Bensong.,Zhou, Qionghua.,Zhang, Junying.,Wang, Yue.,Yang, Bingchao.,...&Liu, Zhongyuan.(2018).Enhanced Stability of Black Phosphorus Field-Effect Transistors via Hydrogen Treatment.ADVANCED ELECTRONIC MATERIALS,4.
MLA	Wan, Bensong,et al."Enhanced Stability of Black Phosphorus Field-Effect Transistors via Hydrogen Treatment".ADVANCED ELECTRONIC MATERIALS 4(2018).

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