QQ客服 官方微博 反馈留言

	Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation
	Wang, Lezhi; Kang, Wang; Ebrahimi, Farbod; Li, Xiang; Huang, Yangqi; Zhao, Chao; Wang, Kang L.; Zhao, Weisheng
刊名	IEEE ELECTRON DEVICE LETTERS
	2018
卷号	39页码:440-443
关键词	Magnetic tunnel junction processing-in-memory voltage-controlled magnetic anisotropy
ISSN号	0741-3106
DOI	10.1109/LED.2018.2791510
URL标识	查看原文
收录类别	SCIE ; EI
WOS记录号	WOS:000426794100029
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5934984
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Wang, Lezhi,Kang, Wang,Ebrahimi, Farbod,et al. Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation[J]. IEEE ELECTRON DEVICE LETTERS,2018,39:440-443.
APA	Wang, Lezhi.,Kang, Wang.,Ebrahimi, Farbod.,Li, Xiang.,Huang, Yangqi.,...&Zhao, Weisheng.(2018).Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation.IEEE ELECTRON DEVICE LETTERS,39,440-443.
MLA	Wang, Lezhi,et al."Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation".IEEE ELECTRON DEVICE LETTERS 39(2018):440-443.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。