Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer

	Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer
	Li, LS ; Guan, M ; Cao, GH ; Li, YY ; Zeng, YP
刊名	displays
	2012
卷号	33 期号:1 页码:17-20
学科主题	半导体材料
收录类别	SCI
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23718]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Li, LS,Guan, M,Cao, GH,et al. Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer[J]. displays,2012,33(1):17-20.
APA	Li, LS,Guan, M,Cao, GH,Li, YY,&Zeng, YP.(2012).Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer.displays,33(1),17-20.
MLA	Li, LS,et al."Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer".displays 33.1(2012):17-20.