Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

	Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
	Li, ZW ; Wei, HY ; Xu, XQ ; Zhao, GJ ; Liu, XL ; Yang, SY ; Zhu, QS ; Wang, ZG
刊名	journal of crystal growth
	2012
卷号	348 期号:1 页码:10-14
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23653]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Li, ZW,Wei, HY,Xu, XQ,et al. Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth[J]. journal of crystal growth,2012,348(1):10-14.
APA	Li, ZW.,Wei, HY.,Xu, XQ.,Zhao, GJ.,Liu, XL.,...&Wang, ZG.(2012).Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth.journal of crystal growth,348(1),10-14.
MLA	Li, ZW,et al."Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth".journal of crystal growth 348.1(2012):10-14.