Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates

	Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates
	Dong, L ; Sun, GS ; Zheng, L ; Liu, XF ; Zhang, F ; Yan, GG ; Zhao, WS ; Wang, L ; Li, XG ; Wang, ZG
刊名	journal of physics d-applied physics
	2012
卷号	45 期号:24 页码:245102
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23649]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Dong, L,Sun, GS,Zheng, L,et al. Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates[J]. journal of physics d-applied physics,2012,45(24):245102.
APA	Dong, L.,Sun, GS.,Zheng, L.,Liu, XF.,Zhang, F.,...&Wang, ZG.(2012).Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates.journal of physics d-applied physics,45(24),245102.
MLA	Dong, L,et al."Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates".journal of physics d-applied physics 45.24(2012):245102.