TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility | |
Yuan, Jun-Hui; Cresti, Alessandro; Xue, Kan-Hao; Song, Ya-Qian; Su, Hai-Lei; Li, Li-Heng; Miao, Nai-Hua; Sun, Zhi-Mei; Wang, Jia-Fu; Miao, Xiang-Shui | |
刊名 | JOURNAL OF MATERIALS CHEMISTRY C |
2019 | |
卷号 | 7页码:639-644 |
关键词 | Carrier mobility Functional materials Light absorption Monolayers Nanoelectronics Band characteristics Direct band gap Future applications High carrier mobility Thermodynamically stable Two-dimensional crystals Two-dimensional materials Uni-axial strains Energy gap |
ISSN号 | 2050-7526 |
DOI | 10.1039/c8tc05164j |
URL标识 | 查看原文 |
收录类别 | SCIE ; EI |
WOS记录号 | WOS:000458780300019 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5922129 |
专题 | 北京航空航天大学 |
推荐引用方式 GB/T 7714 | Yuan, Jun-Hui,Cresti, Alessandro,Xue, Kan-Hao,et al. TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility[J]. JOURNAL OF MATERIALS CHEMISTRY C,2019,7:639-644. |
APA | Yuan, Jun-Hui.,Cresti, Alessandro.,Xue, Kan-Hao.,Song, Ya-Qian.,Su, Hai-Lei.,...&Miao, Xiang-Shui.(2019).TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility.JOURNAL OF MATERIALS CHEMISTRY C,7,639-644. |
MLA | Yuan, Jun-Hui,et al."TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility".JOURNAL OF MATERIALS CHEMISTRY C 7(2019):639-644. |
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