CORC  > 北京航空航天大学
TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility
Yuan, Jun-Hui; Cresti, Alessandro; Xue, Kan-Hao; Song, Ya-Qian; Su, Hai-Lei; Li, Li-Heng; Miao, Nai-Hua; Sun, Zhi-Mei; Wang, Jia-Fu; Miao, Xiang-Shui
刊名JOURNAL OF MATERIALS CHEMISTRY C
2019
卷号7页码:639-644
关键词Carrier mobility Functional materials Light absorption Monolayers Nanoelectronics Band characteristics Direct band gap Future applications High carrier mobility Thermodynamically stable Two-dimensional crystals Two-dimensional materials Uni-axial strains Energy gap
ISSN号2050-7526
DOI10.1039/c8tc05164j
URL标识查看原文
收录类别SCIE ; EI
WOS记录号WOS:000458780300019
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5922129
专题北京航空航天大学
推荐引用方式
GB/T 7714
Yuan, Jun-Hui,Cresti, Alessandro,Xue, Kan-Hao,et al. TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility[J]. JOURNAL OF MATERIALS CHEMISTRY C,2019,7:639-644.
APA Yuan, Jun-Hui.,Cresti, Alessandro.,Xue, Kan-Hao.,Song, Ya-Qian.,Su, Hai-Lei.,...&Miao, Xiang-Shui.(2019).TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility.JOURNAL OF MATERIALS CHEMISTRY C,7,639-644.
MLA Yuan, Jun-Hui,et al."TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility".JOURNAL OF MATERIALS CHEMISTRY C 7(2019):639-644.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace