Synthesis of GaN nanorods by ammoniating Ga2O3 films on TiO2 (rutile) layer deposited on Si(111) substrates | |
Sun, Lili[1]; Xue, Chengshan[1]; Sun, Chuanwei[2]; Ai, Yujie[1]; Zhuang, Huizhao[1]; Wang, Fuxue[1]; Chen, Jinhua[1]; Li, Hong[1]; Yang, Zhaozhu[1]; Qin, Lixia[1] | |
2007 | |
卷号 | 61期号:30页码:5220-5222 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000251202600011 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5799616 |
专题 | 山东师范大学 |
作者单位 | 1.[1]Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China 2.[2]Jinan Univ, Sch Informat Sci & Engn, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Sun, Lili[1],Xue, Chengshan[1],Sun, Chuanwei[2],et al. Synthesis of GaN nanorods by ammoniating Ga2O3 films on TiO2 (rutile) layer deposited on Si(111) substrates[J],2007,61(30):5220-5222. |
APA | Sun, Lili[1].,Xue, Chengshan[1].,Sun, Chuanwei[2].,Ai, Yujie[1].,Zhuang, Huizhao[1].,...&Qin, Lixia[1].(2007).Synthesis of GaN nanorods by ammoniating Ga2O3 films on TiO2 (rutile) layer deposited on Si(111) substrates.,61(30),5220-5222. |
MLA | Sun, Lili[1],et al."Synthesis of GaN nanorods by ammoniating Ga2O3 films on TiO2 (rutile) layer deposited on Si(111) substrates".61.30(2007):5220-5222. |
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