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	Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition
	Xiao, Qingquan; Xie, Quan; Chen, Qian; Zhao, Kejie; Yu, Zhiqiang; Shen, Xiangqian
	2011
卷号	32期号:8
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5757863
专题	贵州大学
作者单位	[1] Institute of Advanced Optoelectronic Materials and Technology, College of Science, Guizhou University, Guiyang 550025, China
推荐引用方式 GB/T 7714	Xiao, Qingquan,Xie, Quan,Chen, Qian,et al. Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition[J],2011,32(8).
APA	Xiao, Qingquan,Xie, Quan,Chen, Qian,Zhao, Kejie,Yu, Zhiqiang,&Shen, Xiangqian.(2011).Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition.,32(8).
MLA	Xiao, Qingquan,et al."Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition".32.8(2011).

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