| Effects of magnesium film thickness and annealing temperature on formation of Mg2Si films on silicon (111) substrate deposited by magnetron sputtering | |
| Xiao, Qingquan; Xie, Quan; Shen, Xiangqian; Zhang, Jinmin; Yu, Zhiqiang; Zhao, Kejie | |
| 2011 | |
| 卷号 | 257期号:17页码:7800-7804 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000290790900072 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5749387 |
| 专题 | 贵州大学 |
| 作者单位 | [1]Guizhou Univ, Coll Sci, Inst Adv Optoelect Mat & Technol, Guiyang 550025, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiao, Qingquan,Xie, Quan,Shen, Xiangqian,et al. Effects of magnesium film thickness and annealing temperature on formation of Mg2Si films on silicon (111) substrate deposited by magnetron sputtering[J],2011,257(17):7800-7804. |
| APA | Xiao, Qingquan,Xie, Quan,Shen, Xiangqian,Zhang, Jinmin,Yu, Zhiqiang,&Zhao, Kejie.(2011).Effects of magnesium film thickness and annealing temperature on formation of Mg2Si films on silicon (111) substrate deposited by magnetron sputtering.,257(17),7800-7804. |
| MLA | Xiao, Qingquan,et al."Effects of magnesium film thickness and annealing temperature on formation of Mg2Si films on silicon (111) substrate deposited by magnetron sputtering".257.17(2011):7800-7804. |
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