| The influence of local Si[sbnd]C bonding density on the photoluminescence of Si-QDs upon thermal annealing the hydrogenated amorphous Si-rich silicon carbide thin films | |
| Wen, Guozhi*; Fan, Jijun; Li, Xianghu; Liu, Yuanyuan | |
| 刊名 | Journal of Non-Crystalline Solids
 |
| 2017 | |
| 卷号 | 463页码:50-55 |
| 关键词 | Silicon Photoluminescence Quantum dots Chemical bonding Confinement PECVD |
| ISSN号 | 0022-3093 |
| DOI | 10.1016/j.jnoncrysol.2017.02.016 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000405154700008;EI:20171003416057 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5578597 |
| 专题 | 武汉轻工大学 |
| 作者单位 | 1.[Fan, Jijun 2.Wen, Guozhi 3.Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Hubei, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Wen, Guozhi*,Fan, Jijun,Li, Xianghu,et al. The influence of local Si[sbnd]C bonding density on the photoluminescence of Si-QDs upon thermal annealing the hydrogenated amorphous Si-rich silicon carbide thin films[J]. Journal of Non-Crystalline Solids,2017,463:50-55. |
| APA | Wen, Guozhi*,Fan, Jijun,Li, Xianghu,&Liu, Yuanyuan.(2017).The influence of local Si[sbnd]C bonding density on the photoluminescence of Si-QDs upon thermal annealing the hydrogenated amorphous Si-rich silicon carbide thin films.Journal of Non-Crystalline Solids,463,50-55. |
| MLA | Wen, Guozhi*,et al."The influence of local Si[sbnd]C bonding density on the photoluminescence of Si-QDs upon thermal annealing the hydrogenated amorphous Si-rich silicon carbide thin films".Journal of Non-Crystalline Solids 463(2017):50-55. |
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