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	Controllable Vapor Growth of Large-Area Aligned CdS x Se1-x Nanowires for Visible Range Integratable Photodetectors.
	Muhammad Shoaib; Xiaoxia Wang; Xuehong Zhang; Qinglin Zhang; Anlian Pan
刊名	Nano-micro letters
	2018
卷号	Vol.10 No.4页码:58
关键词	Bandgap engineering CdSxSe1−x nanowires Graphoepitaxial effect Optical waveguide Photodetectors
ISSN号	2150-5551
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5469922
专题	湖南大学
作者单位	Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, 410082 Hunan People's Republic of China.
推荐引用方式 GB/T 7714	Muhammad Shoaib,Xiaoxia Wang,Xuehong Zhang,et al. Controllable Vapor Growth of Large-Area Aligned CdS x Se1-x Nanowires for Visible Range Integratable Photodetectors.[J]. Nano-micro letters,2018,Vol.10 No.4:58.
APA	Muhammad Shoaib,Xiaoxia Wang,Xuehong Zhang,Qinglin Zhang,&Anlian Pan.(2018).Controllable Vapor Growth of Large-Area Aligned CdS x Se1-x Nanowires for Visible Range Integratable Photodetectors..Nano-micro letters,Vol.10 No.4,58.
MLA	Muhammad Shoaib,et al."Controllable Vapor Growth of Large-Area Aligned CdS x Se1-x Nanowires for Visible Range Integratable Photodetectors.".Nano-micro letters Vol.10 No.4(2018):58.

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