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	Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study (vol 17, pg 140, 2018)
	Chen, NK; Li, XB; Wang, XP; Xie, SY; Tian, WQ; Zhang, SB; Sun, HB
刊名	IEEE TRANSACTIONS ON NANOTECHNOLOGY
	2018
卷号	Vol.17 No.3页码:614
ISSN号	1536-125X
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5467238
专题	湖南大学
作者单位	1.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China 2.Hunan Univ, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China 3.Chongqing Univ, Coll Chem & Chem Engn, Chongqing 401331, Peoples R China 4.Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA 5.Tsinghua Univ, Dept Precis Instrument, Beijing 100084, Peoples R China
推荐引用方式 GB/T 7714	Chen, NK,Li, XB,Wang, XP,et al. Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study (vol 17, pg 140, 2018)[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY,2018,Vol.17 No.3:614.
APA	Chen, NK.,Li, XB.,Wang, XP.,Xie, SY.,Tian, WQ.,...&Sun, HB.(2018).Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study (vol 17, pg 140, 2018).IEEE TRANSACTIONS ON NANOTECHNOLOGY,Vol.17 No.3,614.
MLA	Chen, NK,et al."Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study (vol 17, pg 140, 2018)".IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.17 No.3(2018):614.

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