| Polarization Engineering in PZT/AlGaN/GaN High-electron-mobility Transistors | |
| Lixiang Chen; Xiaohua Ma; Jiejie Zhu; Bin Hou; Fang Song; Qing Zhu; Meng Zhang; Ling Yang; Yue Hao | |
| 刊名 | IEEE Transactions on Electron Devices
 |
| 2018 | |
| 卷号 | Vol.65 No.8页码:3149-3155 |
| ISSN号 | 0018-9383 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5460103 |
| 专题 | 湖南大学 |
| 推荐引用方式 GB/T 7714 | Lixiang Chen,Xiaohua Ma,Jiejie Zhu,et al. Polarization Engineering in PZT/AlGaN/GaN High-electron-mobility Transistors[J]. IEEE Transactions on Electron Devices,2018,Vol.65 No.8:3149-3155. |
| APA | Lixiang Chen.,Xiaohua Ma.,Jiejie Zhu.,Bin Hou.,Fang Song.,...&Yue Hao.(2018).Polarization Engineering in PZT/AlGaN/GaN High-electron-mobility Transistors.IEEE Transactions on Electron Devices,Vol.65 No.8,3149-3155. |
| MLA | Lixiang Chen,et al."Polarization Engineering in PZT/AlGaN/GaN High-electron-mobility Transistors".IEEE Transactions on Electron Devices Vol.65 No.8(2018):3149-3155. |
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