Effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 and stress control

	Effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 and stress control
	Li YQ(李玉琼); Wang HQ; Wang WY; Yu ZN; Liu HS(刘河山); Jin G(靳刚); Jin, G
刊名	ACTA MECHANICA SINICA
	2012-10-01
通讯作者邮箱	gajin@imech.ac.cn
卷号	28 期号:5 页码:1382-1388
关键词	Film stress Stress controlling Ion-beam assisted deposition Hartmann-Shack sensor Thin-Films Residual-Stress
ISSN号	0567-7718
通讯作者	Jin, G
产权排序	[Li, Yu-Qiong;Liu, He-Shan; Jin, Gang] Chinese Acad Sci, Inst Mech, Natl Micrograv Lab NML, Beijing 100190, Peoples R China; [Wang, Hua-Qing] Daheng New Epoch Technol Inc, Opt Thin Film Ctr, Beijing 100070, Peoples R China; [Wang, Wu-Yu] Beijing Gen Res Inst Nonferrous Met, Div Mineral Res & Mat Energy, Beijing 100088, Peoples R China; [Li, Yu-Qiong; Yu, Zhi-Nong] Beijing Inst Technol, Sch Optoelect, Beijing 100081, Peoples R China
合作状况	国内
中文摘要	Based on Hartmann-Shack sensor technique, an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2, and comparison was made between the film stresses prepared respectively by the conventional process and the ion-beam assisted deposition. The effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 was investigated in details, and the stress control methodologies using on-line adjustment and film doping were put forward. The results show that the film stress value of TiO2 prepared by ion-beam assisted deposition is 40 MPa lower than that prepared by conventional process, and the stress of TiO2 film changes gradually from tensile stress into compressive stress with increasing ion energy;while the film stress of SiO2 is a tensile stress under ion-beam assisted deposition because of the ion-beam sputtering effect, and the film refractive index decreases with increasing ion energy. A dynamic film stress control can be achieved through in-situ adjustment of the processing parameters based on the online film stress measuring technique, and the intrinsic stress of film can be effectively changed through film doping.
学科主题	制造工艺力学
分类号	二类
类目[WOS]	Engineering, Mechanical; Mechanics
关键词[WOS]	THIN-FILMS; RESIDUAL-STRESS
收录类别	SCI ; EI ; CSCD
原文出处	http://dx.doi.org/10.1007/s10409-012-0146-z
语种	英语
WOS记录号	WOS:000310884300018
公开日期	2013-01-18
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/46583]
专题	力学研究所_国家微重力实验室
通讯作者	Jin, G
推荐引用方式 GB/T 7714	Li YQ,Wang HQ,Wang WY,et al. Effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 and stress control[J]. ACTA MECHANICA SINICA,2012,28(5):1382-1388.
APA	Li YQ.,Wang HQ.,Wang WY.,Yu ZN.,Liu HS.,...&Jin, G.(2012).Effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 and stress control.ACTA MECHANICA SINICA,28(5),1382-1388.
MLA	Li YQ,et al."Effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 and stress control".ACTA MECHANICA SINICA 28.5(2012):1382-1388.